Everlight Gallium nitride (GaN) Power Devices offer incredible advantages in terms of lightning-fast switching speeds and compact integration. These state-of-the-art GaN power devices from Everlight are the perfect replacement for medium to low voltage silicon-based MOSFETs in high-frequency applications such as consumer electronics and new energy vehicles.

The Everlight GaN Power Diode series covers a wide range of resistances, spanning from 100 mOhm to 300 mOhm. This ensures exceptional conductivity and efficiency for your power applications. Packaged in the compact and reliable DFN format, these power diodes are designed to seamlessly fit into your existing systems.